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| VISHAY SFH617A Vishay Semiconductors Optocoupler, High Reliability, 5300 VRMS Features * Good CTR Linearity Depending on Forward Current * Isolation Test Voltage, 5300 VRMS * High Collector-Emitter Voltage, VCEO = 70 V * Low Saturation Voltage * Fast Switching Times * Low CTR Degradation * Temperature Stable * Low Coupling Capacitance * End-Stackable, .100 " (2.54 mm) Spacing * High Common-Mode Interference Immunity * Lead-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A C 1 2 4 3 C E 17907 e3 Pb Pb-free Agency Approvals * UL1577, File No. E52744 System Code H or J, Double Protection * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 * CSA 93751 The couplers are end-stackable with 2.54 mm spacing. Creepage and clearance distances of > 8.0 mm are achieved with option 6. This version complies with IEC 60950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Specifications subject to change. Order Information Part SFH617A-1 SFH617A-2 SFH617A-3 Remarks CTR 40 - 80 %, DIP-4 CTR 63 - 125 %, DIP-4 CTR 100 - 200 %, DIP-4 CTR 160 - 320 %, DIP-4 CTR 40 - 80 %, DIP-4 400 mil (option 6) CTR 63 - 125 %, DIP-4 400 mil (option 6) CTR 63 - 125 %, SMD-4 (option 9) CTR 100 - 200 %, DIP-4 400 mil (option 6) CTR 100 - 200 %, SMD-4 (option 7) CTR 160 - 320 %, DIP-4 400 mil (option 6) Description The SFH617A (DIP) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits. SFH617A-4 SFH617A-1X006 SFH617A-2X006 SFH617A-2X009 SFH617A-3X006 SFH617A-3X007 SFH617A-4X006 For additional information on the available options refer to Option Information. Document Number 83740 Rev. 1.4, 26-Oct-04 www.vishay.com 1 SFH617A Vishay Semiconductors Absolute Maximum Ratings VISHAY Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage DC Forward current Surge forward current Power dissipation t 10 s Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 Unit V mA A mW Output Parameter Collector-emitter voltage Emitter-collector voltage Collector current t 1.0 ms Power dissipation Test condition Symbol VCE VEC IC IC Pdiss Value 70 7.0 50 100 150 Unit V V mA mA mW Coupler Parameter Isolation test voltage between emitter and detector, refer to climate DIN 40046, part 2, Nov. 74 Creepage Clearance Insulation thickness between emitter and detector Comparative Tracking index per DIN IEC 112/VDEO 303, part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature range Ambient temperature range Junction temperature Soldering temperature max. 10 s. dip soldering distance to seating plane 1.5 mm RIO RIO Tstg Tamb Tj Tsld Test condition Symbol VISO Value 5300 Unit VRMS 7.0 7.0 0.4 175 1012 1011 - 55 to + 150 - 55 to + 100 100 260 mm mm mm C C C C www.vishay.com 2 Document Number 83740 Rev. 1.4, 26-Oct-04 VISHAY SFH617A Vishay Semiconductors Figure 1. Permissible Power Dissipation vs. Ambient Temperature 200 P -Power Dissipation (mW) tot 150 Phototransistor 100 50 Diode 0 0 18483 25 50 75 100 125 150 Tamb - Ambient Temperature ( C ) Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input (IR GaAs) Parameter Forward voltage Reverse current Capacitance Thermal resistance Test condition IF = 60 mA VR = 6.0 V VR = 0 V, f = 1.0 MHz Symbol VF IR CO Rthja Min Typ. 1.25 0.01 13 750 Max 1.65 10 Unit V A pF K/W Output (Si Phototransistor) Parameter Collector-emitter capacitance Thermal resistance Collector-emitter leakage current VCE = 10 V SFH617A-1 SFH617A-2 SFH617A-3 SFH617A-4 Test condition VCE = 5 V, f = 1.0 MHz Part Symbol CCE Rthja ICEO ICEO ICEO ICEO Min Typ. 5.2 500 2.0 2.0 5.0 5.0 50 50 100 100 Max Unit pF K/W nA nA nA nA Coupler Parameter Collector-emitter saturation voltage Coupling capacitance Test condition IF = 10 mA, f = 1.0 MHz Symbol VCEsat CC Min 0.4 Typ. 0.25 0.4 Max Unit V pF Document Number 83740 Rev. 1.4, 26-Oct-04 www.vishay.com 3 SFH617A Vishay Semiconductors Current Transfer Ratio Parameter IC/IF Test condition IF = 10 mA, VCE = 5.0 V Part SFH617A-1 SFH617A-2 SFH617A-3 SFH617A-4 IF = 1.0 mA, VCE = 5.0 V SFH617A-1 SFH617A-2 SFH617A-3 SFH617A-4 Symbol CTR CTR CTR CTR CTR CTR CTR CTR Min 40 63 100 160 13 22 34 56 30 45 70 90 Typ. VISHAY Max 80 125 200 320 Unit % % % % % % % % Switching Characteristics Without Saturation Parameter Turn-on time Rise time Turn-off time Fall time Cut-off frequency With Saturation Parameter Turn-on time IF = 20 mA IF = 10 mA IF = 5.0 mA Rise time IF = 20 mA IF = 10 mA IF = 5.0 mA Turn-off time IF = 20 mA IF = 10 mA IF = 5.0 mA Fall time IF = 20 mA IF = 10 mA IF = 5.0 mA Test condition Part SFH617A-1 SFH617A-2 SFH617A-3 SFH617A-4 SFH617A-1 SFH617A-2 SFH617A-3 SFH617A-4 SFH617A-1 SFH617A-2 SFH617A-3 SFH617A-4 SFH617A-1 SFH617A-2 SFH617A-3 SFH617A-4 Symbol ton ton ton ton tr tr tr tr toff toff toff toff tf tf tf tf Min Typ. 3.0 4.2 4.2 6.0 2.0 3.0 3.0 4.6 18 23 23 25 11 14 14 15 Max Unit s s s s s s s s s s s s s s s s Test condition IF = 10 mA, VCC = 5.0 V, RL = 75 IF = 10 mA, VCC = 5.0 V, RL = 75 IF = 10 mA, VCC = 5.0 V, RL = 75 IF = 10 mA, VCC = 5.0 V, RL = 75 IF = 10 mA, VCC = 5.0 V, Symbol ton tr toff tf fctr Min Typ. 3.0 2.0 2.3 2.0 250 Max Unit s s s s kHz www.vishay.com 4 Document Number 83740 Rev. 1.4, 26-Oct-04 VISHAY Typical Characteristics (Tamb = 25 C unless otherwise specified) SFH617A Vishay Semiconductors IF RL = 75 VCC = 5 V IC 47 isfh610a_01 isfh610a_04 Figure 2. Linear Operation ( without Saturation) Figure 5. Output Characteristics (typ.) Collector Current vs. Collector-Emitter Voltage VF = f (IF) IF 1.0 k VCC = 5 V 47 isfh610a_02 isfh610a_05 Figure 3. Switching Operation (with Saturation) Figure 6. Diode Forward Voltage vs. Forward Current f = 1.0 MHz IF = 10 mA, VCC = 5.0 V isfh610a_06 isfh610a_03 Figure 4. Current Transfer Ratio (CTR) vs. Temperature Figure 7. Transistor Capacitance (typ.) vs. Collector-Emitter Voltage Document Number 83740 Rev. 1.4, 26-Oct-04 www.vishay.com 5 SFH617A Vishay Semiconductors VISHAY Ptot = f (TA) Pulse cycle D = parameter, isfh610a_07 isfh610a_08 Figure 8. Permissible Pulse Handling Capability Forward Current vs. Pulse Width Figure 9. Permissible Power Dissipation vs. Temperature Package Dimensions in Inches (mm) 2 1 pin one ID .255 (6.48) .268 (6.81) ISO Method A 3 4 .179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .031 (.79) typ. .050 (1.27) typ. .130 (3.30) .150 (3.81) 4 typ. .018 (.46) .022 (.56) 10 .020 (.508 ) .035 (.89) .050 (1.27) .100 (2.54) 3-9 .300 (7.62) typ. .230 (5.84) .250 (6.35) .110 (2.79) .130 (3.30) i178027 .008 (.20) .012 (.30) www.vishay.com 6 Document Number 83740 Rev. 1.4, 26-Oct-04 VISHAY SFH617A Vishay Semiconductors Option 6 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN. Option 7 .300 (7.62) TYP . Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15 max. 18450 Document Number 83740 Rev. 1.4, 26-Oct-04 www.vishay.com 7 SFH617A Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 8 Document Number 83740 Rev. 1.4, 26-Oct-04 |
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